Semiconductor device with gate level including transistors of first type and transistors of second type with corresponding gate contact placement restriction

ABSTRACT

A cell of a semiconductor device includes a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell also includes a gate electrode level including conductive features defined to extend in only a first parallel direction. Adjacent ones of the conductive features that share a common line of extent in the first parallel direction are fabricated from respective originating layout features that are separated from each other by an end-to-end spacing having a size that is substantially equal across the gate electrode level region and is minimized to an extent allowed by a semiconductor device manufacturing capability. Some of the conductive features form respective PMOS and/or NMOS transistor devices. A number of the PMOS transistor devices is equal to a number of the NMOS transistor devices in the cell. The cell also includes a number of interconnect levels formed above the gate electrode level.

CLAIM OF PRIORITY

This application is a continuation application under 35 U.S.C. 120 ofprior U.S. application Ser. No. 12/212,562, filed Sep. 17, 2008, nowU.S. Pat. No. 7,842,975 and entitled “Dynamic Array Architecture,” whichis a continuation application under 35 U.S.C. 120 of prior U.S.application Ser. No. 11/683,402, filed Mar. 7, 2007, now U.S. Pat. No.7,446,352 and entitled “Dynamic Array Architecture,” which claimspriority under 35 U.S.C. 119(e) to U.S. Provisional Patent ApplicationNo. 60/781,288, filed Mar. 9, 2006. Each of the above-identifiedapplications is incorporated herein by reference in its entirety.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is related to each application identified in the tablebelow. The disclosure of each application identified in the table belowis incorporated herein by reference in its entirety.

Application Filing Title No. Date Semiconductor Device with Dynamic12/013,342 Jan. 11, 2008 Array Section Methods for DesigningSemiconductor 12/013,356 Jan. 11, 2008 Device with Dynamic Array SectionMethods for Defining Dynamic Array 12/013,366 Jan. 11, 2008 Section withManufacturing Assurance Halo and Apparatus Implementing the SameEnforcement of Semiconductor 12/363,705 Jan. 30, 2009 StructureRegularity for Localized Transistors and Interconnect Cross-CoupledTransistor Layouts Using 12/402,465 Mar. 11, 2009 Linear Gate LevelFeatures Defining and Using Contact Grids in 12/399,948 Mar. 7, 2009Circuit Using Dynamic Array Architecture Methods for Multi-Wire Routingand 12/411,249 Mar. 25, 2009 Apparatus Implementing Same Co-OptimizedNano-Patterns for 12/484,130 Jun. 12, 2009 Integrated Circuit DesignMethods for Defining and Utilizing Sub- 12/479,674 Jun. 5, 2009Resolution Features in Linear Topology Optimizing Layout of Irregular12/481,445 Jun. 9, 2009 Structures in Regular Layout Context Methods forCell Phasing in Grid-Based 12/497,052 Jul. 2, 2009 Architecture andApparatus Implementing Same Use of Oversized Contacts and Vias in a12/466,335 May 14, 2009 Linearly Constrained Topology Use of OversizedContacts and Vias in a 12/466,341 May 14, 2009 Linearly ConstrainedTopology Methods for Controlling Microloading 12/512,932 Jul. 30, 2009Variation in Semiconductor Wafer Layout and Fabrication Circuitry andLayouts for XOR and 12/435,672 May 5, 2009 XNOR Logic SemiconductorDevice Layout Having 12/561,207 Sep. 16, 2009 Restricted Layout RegionIncluding Rectangular Shaped Gate Electrode Layout Features DefinedAlong At Least Four Gate Electrode Tracks with CorrespondingNon-Symmetric Diffusion Regions Semiconductor Device Layout Including12/561,216 Sep. 16, 2009 Cell Layout Having Restricted Gate ElectrodeLevel Layout with Rectangular Shaped Gate Electrode Layout FeaturesDefined Along At Least Four Gate Electrode Tracks with CorrespondingNon-Symmetric Diffusion Regions Semiconductor Device Layout Having12/561,220 Sep. 16, 2009 Restricted Layout Region Including RectangularShaped Gate Electrode Layout Features and Equal Number of PMOS and NMOSTransistors Semiconductor Device Layout Including 12/561,224 Sep. 16,2009 Cell Layout Having Restricted Gate Electrode Level Layout withRectangular Shaped Gate Electrode Layout Features and Equal Number ofPMOS and NMOS Transistors Semiconductor Device Layout Having 12/561,229Sep. 16, 2009 Restricted Layout Region Including Rectangular Shaped GateElectrode Layout Features and At Least Eight Transistors SemiconductorDevice Layout Including 12/561,234 Sep. 16, 2009 Cell Layout HavingRestricted Gate Electrode Level Layout with Rectangular Shaped GateElectrode Layout Features and At Least Eight Transistors SemiconductorDevice Portion Having 12/561,238 Sep. 16, 2009 Gate Electrode ConductiveStructures Formed from Rectangular Shaped Gate Electrode Layout FeaturesDefined Along At Least Four Gate Electrode Tracks and HavingCorresponding Non- Symmetric Diffusion Regions Semiconductor DevicePortion Having 12/561,243 Sep. 16, 2009 Sub-Wavelength-Sized GateElectrode Conductive Structures Formed from Rectangular Shaped GateElectrode Layout Features Defined Along At Least Four Gate ElectrodeTracks and Having Corresponding Non-Symmetric Diffusion RegionsSemiconductor Device Portion Having 12/561,246 Sep. 16, 2009 Sub-193Nanometers-Sized Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features Defined Along At LeastFour Gate Electrode Tracks and Having Corresponding Non-SymmetricDiffusion Regions Semiconductor Device Portion Having 12/561,247 Sep.16, 2009 Gate Electrode Conductive Structures Formed from RectangularShaped Gate Electrode Layout Features and Having Equal Number of PMOSand NMOS Transistors Semiconductor Device Portion Having 12/563,031 Sep.18, 2009 Sub-Wavelength-Sized Gate Electrode Conductive StructuresFormed from Rectangular Shaped Gate Electrode Layout Features and HavingEqual Number of PMOS and NMOS Transistors Semiconductor Device PortionHaving 12/563,042 Sep. 18, 2009 Sub-193 Nanometers-Sized Gate ElectrodeConductive Structures Formed from Rectangular Shaped Gate ElectrodeLayout Features and Having Equal Number of PMOS and NMOS TransistorsSemiconductor Device Portion Having 12/563,051 Sep. 18, 2009 GateElectrode Conductive Structures Formed from Rectangular Shaped GateElectrode Layout Features and Having At Least Eight TransistorsSemiconductor Device Portion Having 12/563,056 Sep. 18, 2009Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features and Having At LeastEight Transistors Semiconductor Device Portion Having 12/563,061 Sep.18, 2009 Sub-193 Nanometers-Sized Gate Electrode Conductive StructuresFormed from Rectangular Shaped Gate Electrode Layout Features and HavingAt Least Eight Transistors Semiconductor Device Layout Having 12/563,063Sep. 18, 2009 Restricted Layout Region Including Linear Shaped GateElectrode Layout Features Defined Along At Least Four Gate ElectrodeTracks with Minimum End-to-End Spacing with Corresponding Non-SymmetricDiffusion Regions Semiconductor Device Layout Including 12/563,066 Sep.18, 2009 Cell Layout Having Restricted Gate Electrode Level Layout withLinear Shaped Gate Electrode Layout Features Defined Along At Least FourGate Electrode Tracks with Minimum End-to- End Spacing withCorresponding Non- Symmetric Diffusion Regions Semiconductor DeviceLayout Having 12/563,074 Sep. 18, 2009 Restricted Layout RegionIncluding Linear Shaped Gate Electrode Layout Features Defined withMinimum End-to- End Spacing and Equal Number of PMOS and NMOSTransistors Semiconductor Device Layout Including 12/563,076 Sep. 18,2009 Cell Layout Having Restricted Gate Electrode Level Layout withLinear Shaped Gate Electrode Layout Features Defined with MinimumEnd-to-End Spacing and Equal Number of PMOS and NMOS TransistorsSemiconductor Device Layout Having 12/563,077 Sep. 18, 2009 RestrictedLayout Region Including Linear Shaped Gate Electrode Layout FeaturesDefined with Minimum End-to- End Spacing and At Least Eight TransistorsSemiconductor Device Layout Including 12/567,528 Sep. 25, 2009 CellLayout Having Restricted Gate Electrode Level Layout with Linear ShapedGate Electrode Layout Features Defined with Minimum End-to-End Spacingand At Least Eight Transistors Semiconductor Device Portion Having12/567,542 Sep. 25, 2009 Gate Electrode Conductive Structures Formedfrom Linear Shaped Gate Electrode Layout Features Defined Along At LeastFour Gate Electrode Tracks with Minimum End-to-End Spacing and HavingCorresponding Non- Symmetric Diffusion Regions Semiconductor DevicePortion Having 12/567,555 Sep. 25, 2009 Sub-Wavelength-Sized GateElectrode Conductive Structures Formed from Linear Shaped Gate ElectrodeLayout Features Defined Along At Least Four Gate Electrode Tracks withMinimum End-to-End Spacing and Having Corresponding Non-SymmetricDiffusion Regions Semiconductor Device Portion Having 12/567,565 Sep.25, 2009 Sub-193 Nanometers-Sized Gate Electrode Conductive StructuresFormed from Linear Shaped Gate Electrode Layout Features Defined AlongAt Least Four Gate Electrode Tracks with Minimum End-to-End Spacing andHaving Corresponding Non-Symmetric Diffusion Regions SemiconductorDevice Portion Having 12/567,574 Sep. 25, 2009 Gate Electrode ConductiveStructures Formed from Linear Shaped Gate Electrode Layout FeaturesDefined with Minimum End-to-End Spacing and Having Equal Number of PMOSand NMOS Transistors Semiconductor Device Portion Having 12/567,586 Sep.25, 2009 Sub-Wavelength-Sized Gate Electrode Conductive StructuresFormed from Linear Shaped Gate Electrode Layout Features Defined withMinimum End-to- End Spacing and Having Equal Number of PMOS and NMOSTransistors Semiconductor Device Portion Having 12/567,597 Sep. 25, 2009Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formedfrom Linear Shaped Gate Electrode Layout Features Defined with MinimumEnd-to-End Spacing and Having Equal Number of PMOS and NMOS TransistorsSemiconductor Device Portion Having 12/567,602 Sep. 25, 2009 GateElectrode Conductive Structures Formed from Linear Shaped Gate ElectrodeLayout Features Defined with Minimum End-to-End Spacing and Having AtLeast Eight Transistors Semiconductor Device Portion Having 12/567,609Sep. 25, 2009 Sub-Wavelength-Sized Gate Electrode Conductive StructuresFormed from Linear Shaped Gate Electrode Layout Features Defined withMinimum End-to- End Spacing and Having At Least Eight TransistorsSemiconductor Device Portion Having 12/567,616 Sep. 25, 2009 Sub-193Nanometers-Sized Gate Electrode Conductive Structures Formed from LinearShaped Gate Electrode Layout Features Defined with Minimum End-to-EndSpacing and Having At Least Eight Transistors Layout of Cell ofSemiconductor Device 12/567,623 Sep. 25, 2009 Having Rectangular ShapedGate Electrode Layout Features Defined Along At Least Four GateElectrode Tracks Layout of Cell of Semiconductor Device 12/567,630 Sep.25, 2009 Having Rectangular Shaped Gate Electrode Layout FeaturesDefined Along At Least Four Gate Electrode Tracks with Correspondingp-type and n- type Diffusion Regions Separated by Central InactiveRegion Layout of Cell of Semiconductor Device 12/567,634 Sep. 25, 2009Having Rectangular Shaped Gate Electrode Layout Features and EqualNumber of PMOS and NMOS Transistors Layout of Cell of SemiconductorDevice 12/567,641 Sep. 25, 2009 Having Rectangular Shaped Gate ElectrodeLayout Features and Equal Number of PMOS and NMOS Transistors withCorresponding p-type and n-type Diffusion Regions Separated by CentralInactive Region Layout of Cell of Semiconductor Device 12/567,648 Sep.25, 2009 Having Rectangular Shaped Gate Electrode Layout Features and AtLeast Eight Transistors Layout of Cell of Semiconductor Device12/567,654 Sep. 25, 2009 Having Rectangular Shaped Gate Electrode LayoutFeatures and At Least Eight Transistors with Corresponding p- type andn-type Diffusion Regions Separated by Central Inactive Region Cell ofSemiconductor Device Having 12/571,343 Sep. 30, 2009 Gate ElectrodeConductive Structures Formed from Rectangular Shaped Gate ElectrodeLayout Features Defined Along At Least Four Gate Electrode Tracks Cellof Semiconductor Device Having 12/571,351 Sep. 30, 2009Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features Defined Along At LeastFour Gate Electrode Tracks Cell of Semiconductor Device Having12/571,357 Sep. 30, 2009 Sub-193 Nanometers-Sized Gate ElectrodeConductive Structures Formed from Rectangular Shaped Gate ElectrodeLayout Features Defined Along At Least Four Gate Electrode Tracks Cellof Semiconductor Device Having 12/571,998 Oct. 1, 2009 Gate ElectrodeConductive Structures Formed from Rectangular Shaped Gate ElectrodeLayout Features and Equal Number of PMOS and NMOS Transistors Cell ofSemiconductor Device Having 10/572,011 Oct. 1, 2009 Sub-Wavelength-SizedGate Electrode Conductive Structures Formed from Rectangular Shaped GateElectrode Layout Features and Equal Number of PMOS and NMOS TransistorsCell of Semiconductor Device Having 10/572,022 Oct. 1, 2009 Sub-193Nanometers-Sized Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features and Equal Number ofPMOS and NMOS Transistors Cell of Semiconductor Device Having 12/572,046Oct. 1, 2009 Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features and At Least EightTransistors Cell of Semiconductor Device Having 12/572,055 Oct. 1, 2009Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed fromRectangular Shaped Gate Electrode Layout Features and At Least EightTransistors Cell of Semiconductor Device Having 12/572,061 Oct. 1, 2009Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formedfrom Rectangular Shaped Gate Electrode Layout Features and At LeastEight Transistors Layout of Cell of Semiconductor Device 12/572,068 Oct.1, 2009 Having Linear Shaped Gate Electrode Layout Features DefinedAlong At Least Four Gate Electrode Tracks with Minimum End-to-EndSpacing Layout of Cell of Semiconductor Device 12/572,077 Oct. 1, 2009Having Linear Shaped Gate Electrode Layout Features Defined Along AtLeast Four Gate Electrode Tracks with Minimum End-to-End Spacing andHaving Corresponding p-type and n-type Diffusion Regions Separated byCentral Inactive Region Layout of Cell of Semiconductor Device12/572,091 Oct. 1, 2009 Having Linear Shaped Gate Electrode LayoutFeatures Defined with Minimum End-to-End Spacing and Having Equal Numberof PMOS and NMOS Transistors Layout of Cell of Semiconductor Device12/572,194 Oct. 1, 2009 Having Linear Shaped Gate Electrode LayoutFeatures Defined with Minimum End-to-End Spacing and Having Equal Numberof PMOS and NMOS Transistors and Having Corresponding p- type and n-typeDiffusion Regions Separated by Central Inactive Region Layout of Cell ofSemiconductor Device 12/572,201 Oct. 1, 2009 Having Linear Shaped GateElectrode Layout Features Defined with Minimum End-to-End Spacing andHaving At Least Eight Transistors Layout of Cell of Semiconductor Device12/572,212 Oct. 1, 2009 Having Linear Shaped Gate Electrode LayoutFeatures Defined with Minimum End-to-End Spacing and Having At LeastEight Transistors and Having Corresponding p-type and n-type DiffusionRegions Separated by Central Inactive Region Cell of SemiconductorDevice Having 12/572,218 Oct. 1, 2009 Gate Electrode ConductiveStructures Formed from Linear Shaped Gate Electrode Layout FeaturesDefined Along At Least Four Gate Electrode Tracks with MinimumEnd-to-End Spacing Cell of Semiconductor Device Having 12/572,221 Oct.1, 2009 Sub-Wavelength-Sized Gate Electrode Conductive Structures Formedfrom Linear Shaped Gate Electrode Layout Features Defined Along At LeastFour Gate Electrode Tracks with Minimum End-to-End Spacing Cell ofSemiconductor Device Having 12/572,225 Oct. 1, 2009 Sub-193Nanometers-Sized Gate Electrode Conductive Structures Formed from LinearShaped Gate Electrode Layout Features Defined Along At Least Four GateElectrode Tracks with Minimum End-to-End Spacing Cell of SemiconductorDevice Having 12/572,229 Oct. 1, 2009 Sub-Wavelength-Sized GateElectrode Conductive Structures Formed from Linear Shaped Gate ElectrodeLayout Features Defined with Minimum End-to- End Spacing and EqualNumber of PMOS and NMOS Transistors Cell of Semiconductor Device Having12/572,232 Oct. 1, 2009 Sub-193 Nanometers-Sized Gate ElectrodeConductive Structures Formed from Linear Shaped Gate Electrode LayoutFeatures Defined with Minimum End-to-End Spacing and Equal Number ofPMOS and NMOS Transistors Cell of Semiconductor Device Having 12/572,237Oct. 1, 2009 Gate Electrode Conductive Structures Formed from LinearShaped Gate Electrode Layout Features Defined with Minimum End-to-EndSpacing and At Least Eight Transistors Cell of Semiconductor DeviceHaving 12/572,239 Oct. 1, 2009 Sub-Wavelength-Sized Gate ElectrodeConductive Structures Formed from Linear Shaped Gate Electrode LayoutFeatures Defined with Minimum End-to- End Spacing and At Least EightTransistors Cell of Semiconductor Device Having 12/572,243 Oct. 1, 2009Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formedfrom Linear Shaped Gate Electrode Layout Features Defined with MinimumEnd-to-End Spacing and At Least Eight Transistors

BACKGROUND

A push for higher performance and smaller die size drives thesemiconductor industry to reduce circuit chip area by approximately 50%every two years. The chip area reduction provides an economic benefitfor migrating to newer technologies. The 50% chip area reduction isachieved by reducing the feature sizes between 25% and 30%. Thereduction in feature size is enabled by improvements in manufacturingequipment and materials. For example, improvement in the lithographicprocess has enabled smaller feature sizes to be achieved, whileimprovement in chemical mechanical polishing (CMP) has in-part enabled ahigher number of interconnect layers.

In the evolution of lithography, as the minimum feature size approachedthe wavelength of the light source used to expose the feature shapes,unintended interactions occurred between neighboring features. Todayminimum feature sizes are approaching 45 nm (nanometers), while thewavelength of the light source used in the photolithography processremains at 193 nm. The difference between the minimum feature size andthe wavelength of light used in the photolithography process is definedas the lithographic gap. As the lithographic gap grows, the resolutioncapability of the lithographic process decreases.

An interference pattern occurs as each shape on the mask interacts withthe light. The interference patterns from neighboring shapes can createconstructive or destructive interference. In the case of constructiveinterference, unwanted shapes may be inadvertently created. In the caseof destructive interference, desired shapes may be inadvertentlyremoved. In either case, a particular shape is printed in a differentmanner than intended, possibly causing a device failure. Correctionmethodologies, such as optical proximity correction (OPC), attempt topredict the impact from neighboring shapes and modify the mask such thatthe printed shape is fabricated as desired. The quality of the lightinteraction prediction is declining as process geometries shrink and asthe light interactions become more complex.

In view of the foregoing, a solution is needed for managing lithographicgap issues as technology continues to progress toward smallersemiconductor device features sizes.

SUMMARY

In one embodiment, a cell of a semiconductor device is disclosed. Thecell includes a substrate portion formed to include a plurality ofdiffusion regions. The plurality of diffusion regions include at leastone p-type diffusion region and at least one n-type diffusion region.The plurality of diffusion regions are separated from each other by oneor more non-active regions of the substrate portion. The p-type and then-type diffusion regions respectively correspond to active areas of thesubstrate portion within which one or more processes are applied tomodify one or more electrical characteristics of the active areas of thesubstrate portion.

Also in this embodiment, the cell includes a gate electrode level of thecell formed above the substrate portion. The gate electrode levelincludes a number of conductive features defined to extend in only afirst parallel direction. Adjacent ones of the number of conductivefeatures that share a common line of extent in the first paralleldirection are fabricated from respective originating layout featuresthat are separated from each other by an end-to-end spacing having asize measured in the first parallel direction. The size of eachend-to-end spacing between originating layout features corresponding toadjacent ones of the number of conductive features within the gateelectrode level of the cell is substantially equal and is minimized toan extent allowed by a semiconductor device manufacturing capability.

Some of the number of conductive features within the gate electrodelevel of the cell are defined to include one or more gate electrodeportions which extend over one or more of the p-type diffusion regionsto form respective PMOS transistor devices. Also, some of the number ofconductive features within the gate electrode level of the cell aredefined to include one or more gate electrode portions which extend overone or more of the n-type diffusion regions to form respective NMOStransistor devices. A number of the PMOS transistor devices is equal toa number of the NMOS transistor devices in the gate electrode level ofthe cell.

Also in this embodiment, the cell includes a number of interconnectlevels formed above the gate electrode level of the cell. The substrateportion, the gate electrode level of the cell, and the number ofinterconnect levels are spatially aligned such that structuresfabricated within each of the substrate portion, the gate electrodelevel of the cell, and the number of interconnect levels spatiallyrelate to connect as required to form functional electronic devices ofthe cell of the semiconductor device.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention;

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention;

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention;

FIG. 3B is an illustration showing separate base grids projected acrossseparate regions of the die, in accordance with an exemplary embodimentof the present invention;

FIG. 3C is an illustration showing an exemplary linear-shaped featuredefined to be compatible with the dynamic array, in accordance with oneembodiment of the present invention;

FIG. 3D is an illustration showing another exemplary linear-shapedfeature defined to be compatible with the dynamic array, in accordancewith one embodiment of the present invention;

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention;

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention;

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention;

FIG. 7A is an illustration showing a traditional approach for makingcontact to the gate electrode;

FIG. 7B is an illustration showing a gate electrode contact defined inaccordance with one embodiment of the present invention;

FIG. 8A is an illustration showing a metal 1 layer defined above andadjacent to the gate electrode contact layer of FIG. 6, in accordancewith one embodiment of the present invention;

FIG. 8B is an illustration showing the metal 1 layer of FIG. 8A withlarger track widths for the metal 1 ground and power tracks, relative tothe other metal 1 tracks;

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention;

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention;

FIG. 11 is an illustration showing conductor tracks traversing thedynamic array in a first diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 12 is an illustration showing conductor tracks traversing thedynamic array in a second diagonal direction relative to the first andsecond reference directions (x) and (y), in accordance with oneembodiment of the present invention;

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention;

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention;

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention;

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention; and

FIG. 14 is an illustration showing a semiconductor chip structure, inaccordance with one embodiment of the present invention.

FIG. 15 shows an example layout architecture defined in accordance withone embodiment of the present invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

Generally speaking, a dynamic array architecture is provided to addresssemiconductor manufacturing process variability associated with acontinually increasing lithographic gap. In the area of semiconductormanufacturing, lithographic gap is defined as the difference between theminimum size of a feature to be defined and the wavelength of light usedto render the feature in the lithographic process, wherein the featuresize is less than the wavelength of the light. Current lithographicprocesses utilize a light wavelength of 193 nm. However, current featuresizes are as small as 65 nm and are expected to soon approach sizes assmall as 45 nm. With a size of 65 nm, the shapes are three times smallerthan the wavelength of the light used to define the shapes. Also,considering that the interaction radius of light is about five lightwavelengths, it should be appreciated that shapes exposed with a 193 nmlight source will influence the exposure of shapes approximately 5*193nm (965 nm) away. When considering the 65 nm sized features with respectto 90 nm sized features, it should be appreciated that approximately twotimes as many 65 nm sizes features may be within the 965 nm interactionradius of the 193 nm light source as compared to the 90 nm sizedfeatures.

Due to the increased number of features within the interaction radius ofthe light source, the extent and complexity of light interferencecontributing to exposure of a given feature is significant.Additionally, the particular shapes associated with the features withinthe interaction radius of the light source weighs heavily on the type oflight interactions that occur. Traditionally, designers were allowed todefine essentially any two-dimensional topology of feature shapes solong as a set of design rules were satisfied. For example, in a givenlayer of the chip, i.e., in a given mask, the designer may have definedtwo-dimensionally varying features having bends that wrap around eachother. When such two-dimensionally varying features are located inneighboring proximity to each other, the light used to expose thefeatures will interact in a complex and generally unpredictable manner.The light interaction becomes increasingly more complex andunpredictable as the feature sizes and relative spacing become smaller.

Traditionally, if a designer follows the established set of designrules, the resulting product will be manufacturable with a specifiedprobability associated with the set of design rules. Otherwise, for adesign that violates the set of design rules, the probability ofsuccessful manufacture of the resulting product is unknown. To addressthe complex light interaction between neighboring two-dimensionallyvarying features, in the interest of successful product manufacturing,the set of design rules is expanded significantly to adequately addressthe possible combinations of two-dimensionally varying features. Thisexpanded set of design rules quickly becomes so complicated and unwieldythat application of the expanded set of design rules becomesprohibitively time consuming, expensive, and prone to error. Forexample, the expanded set of design rules requires complex verification.Also, the expanded set of design rules may not be universally applied.Furthermore, manufacturing yield is not guaranteed even if all designrules are satisfied.

It should be appreciated that accurate prediction of all possible lightinteractions when rendering arbitrarily-shaped two-dimensional featuresis generally not feasible. Moreover, as an alternative to or incombination with expansion of the set of design rules, the set of designrules may also be modified to include increased margin to account forunpredictable light interaction between the neighboringtwo-dimensionally varying features. Because the design rules areestablished in an attempt to cover the random two-dimensional featuretopology, the design rules may incorporate a significant amount ofmargin. While addition of margin in the set of design rules assists withthe layout portions that include the neighboring two-dimensionallyvarying features, such global addition of margin causes other portionsof the layout that do not include the neighboring two-dimensionallyvarying features to be overdesigned, thus leading to decreasedoptimization of chip area utilization and electrical performance.

In view of the foregoing, it should be appreciated that semiconductorproduct yield is reduced as a result of parametric failures that stemfrom variability introduced by design-dependent unconstrained featuretopologies, i.e., arbitrary two-dimensionally varying features disposedin proximity to each other. By way of example, these parametric failuresmay result from failure to accurately print contacts and vias and fromvariability in fabrication processes. The variability in fabricationprocesses may include CMP dishing, layout feature shape distortion dueto photolithography, gate distortion, oxide thickness variability,implant variability, and other fabrication related phenomena. Thedynamic array architecture of the present invention is defined toaddress the above-mentioned semiconductor manufacturing processvariability.

FIG. 1 is an illustration showing a number of neighboring layoutfeatures and a representation of light intensity used to render each ofthe layout features, in accordance with one embodiment of the presentinvention. Specifically, three neighboring linear-shaped layout features(101A-101C) are depicted as being disposed in a substantially parallelrelationship within a given mask layer. The distribution of lightintensity from a layout feature shape is represented by a sinc function.The sinc functions (103A-103C) represent the distribution of lightintensity from each of the layout features (101A-101C, respectively).The neighboring linear-shaped layout features (101A-101C) are spacedapart at locations corresponding to peaks of the sinc functions(103A-103C). Thus, constructive interference between the light energyassociated with the neighboring layout features (101A-101C), i.e., atthe peaks of the sinc functions (103A-103C), serves to reinforce theexposure of the neighboring shapes (101A-101C) for the layout featurespacing illustrated. In accordance with the foregoing, the lightinteraction represented in FIG. 1 represents a synchronous case.

As illustrated in FIG. 1, when linear-shaped layout features are definedin a regular repeating pattern at an appropriate spacing, constructiveinterference of the light energy associated with the various layoutfeatures serves to enhance the exposure of each layout feature. Theenhanced exposure of the layout features provided by the constructivelight interference can dramatically reduce or even eliminate a need toutilize optical proximity correction (OPC) and/or reticle enhancementtechnology (RET) to obtain sufficient rendering of the layout features.

A forbidden pitch, i.e., forbidden layout feature spacing, occurs whenthe neighboring layout features (101A-101C) are spaced such that peaksof the sinc function associated with one layout feature align withvalleys of the sinc function associated with another layout feature,thus causing destructive interference of the light energy. Thedestructive interference of the light energy causes the light energyfocused at a given location to be reduced. Therefore, to realize thebeneficial constructive light interference associated with neighboringlayout features, it is necessary to predict the layout feature spacingat which the constructive overlap of the sinc function peaks will occur.Predictable constructive overlap of the sinc function peaks andcorresponding layout feature shape enhancement can be realized if thelayout feature shapes are rectangular, near the same size, and areoriented in the same direction, as illustrated by the layout features(101A-101C) in FIG. 1. In this manner, resonant light energy fromneighboring layout feature shapes is used to enhance the exposure of aparticular layout feature shape.

FIG. 2 is an illustration showing a generalized stack of layers used todefine a dynamic array architecture, in accordance with one embodimentof the present invention. It should be appreciated that the generalizedstack of layers used to define the dynamic array architecture, asdescribed with respect to FIG. 2, is not intended to represent anexhaustive description of the CMOS manufacturing process. However, thedynamic array is to be built in accordance with standard CMOSmanufacturing processes. Generally speaking, the dynamic arrayarchitecture includes both the definition of the underlying structure ofthe dynamic array and the techniques for assembling the dynamic arrayfor optimization of area utilization and manufacturability. Thus, thedynamic array is designed to optimize semiconductor manufacturingcapabilities.

With regard to the definition of the underlying structure of the dynamicarray, the dynamic array is built-up in a layered manner upon a basesubstrate 201, e.g., upon a silicon substrate, or silicon-on-insulator(SOI) substrate. Diffusion regions 203 are defined in the base substrate201. The diffusion regions 203 represent selected regions of the basesubstrate 201 within which impurities are introduced for the purpose ofmodifying the electrical properties of the base substrate 201. Above thediffusion regions 203, diffusion contacts 205 are defined to enableconnection between the diffusion regions 203 and conductor lines. Forexample, the diffusion contacts 205 are defined to enable connectionbetween source and drain diffusion regions 203 and their respectiveconductor nets. Also, gate electrode features 207 are defined above thediffusion regions 203 to form transistor gates. Gate electrode contacts209 are defined to enable connection between the gate electrode features207 and conductor lines. For example, the gate electrode contacts 209are defined to enable connection between transistor gates and theirrespective conductor nets.

Interconnect layers are defined above the diffusion contact 205 layerand the gate electrode contact layer 209. The interconnect layersinclude a first metal (metal 1) layer 211, a first via (via 1) layer213, a second metal (metal 2) layer 215, a second via (via 2) layer 217,a third metal (metal 3) layer 219, a third via (via 3) layer 221, and afourth metal (metal 4) layer 223. The metal and via layers enabledefinition of the desired circuit connectivity. For example, the metaland via layers enable electrical connection of the various diffusioncontacts 205 and gate electrode contacts 209 such that the logicfunction of the circuitry is realized. It should be appreciated that thedynamic array architecture is not limited to a specific number ofinterconnect layers, i.e., metal and via layers. In one embodiment, thedynamic array may include additional interconnect layers 225, beyond thefourth metal (metal 4) layer 223. Alternatively, in another embodiment,the dynamic array may include less than four metal layers.

The dynamic array is defined such that layers (other than the diffusionregion layer 203) are restricted with regard to layout feature shapesthat can be defined therein. Specifically, in each layer other than thediffusion region layer 203, only linear-shaped layout features areallowed. A linear-shaped layout feature in a given layer ischaracterized as having a consistent vertical cross-section shape andextending in a single direction over the substrate. Thus, thelinear-shaped layout features define structures that areone-dimensionally varying. The diffusion regions 203 are not required tobe one-dimensionally varying, although they are allowed to be ifnecessary. Specifically, the diffusion regions 203 within the substratecan be defined to have any two-dimensionally varying shape with respectto a plane coincident with a top surface of the substrate. In oneembodiment, the number of diffusion bend topologies is limited such thatthe interaction between the bend in diffusion and the conductivematerial, e.g., polysilicon, that forms the gate electrode of thetransistor is predictable and can be accurately modeled. Thelinear-shaped layout features in a given layer are positioned to beparallel with respect to each other. Thus, the linear-shaped layoutfeatures in a given layer extend in a common direction over thesubstrate and parallel with the substrate.

The underlying layout methodology of the dynamic array uses constructivelight interference of light waves in the lithographic process toreinforce exposure of neighboring shapes in a given layer. Therefore,the spacing of the parallel, linear-shaped layout features in a givenlayer is designed around the constructive light interference of thestanding light waves such that lithographic correction (e.g., OPC RET)is minimized or eliminated. Thus, in contrast to conventionalOPC/RET-based lithographic processes, the dynamic array defined hereinexploits the light interaction between neighboring features, rather thanattempting to compensate for the light interaction between neighboringfeatures.

Because the standing light wave for a given linear-shaped layout featurecan be accurately modeled, it is possible to predict how the standinglight waves associated with the neighboring linear-shaped layoutfeatures disposed in parallel in a given layer will interact. Therefore,it is possible to predict how the standing light wave used to expose onelinear-shaped feature will contribute to the exposure of its neighboringlinear-shaped features. Prediction of the light interaction betweenneighboring linear-shaped features enables the identification of anoptimum feature-to-feature spacing such that light used to render agiven shape will reinforce its neighboring shapes. Thefeature-to-feature spacing in a given layer is defined as the featurepitch, wherein the pitch is the center-to-center separation distancebetween adjacent linear-shaped features in a given layer.

To provide the desired exposure reinforcement between neighboringfeatures, the linear-shaped layout features in a given layer are spacedsuch that constructive and destructive interference of the light fromneighboring features will be optimized to produce the best rendering ofall features in the neighborhood. The feature-to-feature spacing in agiven layer is proportional to the wavelength of the light used toexpose the features. The light used to expose each feature within abouta five light wavelength distance from a given feature will serve toenhance the exposure of the given feature to some extent. Theexploitation of constructive interference of the standing light wavesused to expose neighboring features enables the manufacturing equipmentcapability to be maximized and not be limited by concerns regardinglight interactions during the lithography process.

As discussed above, the dynamic array incorporates a restricted topologyin which the features within each layer (other than diffusion) arerequired to be linear-shaped features that are oriented in a parallelmanner to traverse over the substrate in a common direction. With therestricted topology of the dynamic array, the light interaction in thephotolithography process can be optimized such that the printed image onthe mask is essentially identical to the drawn shape in the layout,i.e., essentially a 100% accurate transfer of the layout onto the resistis achieved.

FIG. 3A is an illustration showing an exemplary base grid to beprojected onto the dynamic array to facilitate definition of therestricted topology, in accordance with one embodiment of the presentinvention. The base grid can be used to facilitate parallel placement ofthe linear-shaped features in each layer of the dynamic array at theappropriate optimized pitch. Although not physically defined as part ofthe dynamic array, the base grid can be considered as a projection oneach layer of the dynamic array. Also, it should be understood that thebase grid is projected in a substantially consistent manner with respectto position on each layer of the dynamic array, thus facilitatingaccurate feature stacking and alignment.

In the exemplary embodiment of FIG. 3A, the base grid is defined as arectangular grid, i.e., Cartesian grid, in accordance with a firstreference direction (x) and a second reference direction (y). Thegridpoint-to-gridpoint spacing in the first and second referencedirections can be defined as necessary to enable definition of thelinear-shaped features at the optimized feature-to-feature spacing.Also, the gridpoint spacing in the first reference direction (x) can bedifferent than the gridpoint spacing in the second reference direction(y). In one embodiment, a single base grid is projected across theentire die to enable location of the various linear-shaped features ineach layer across the entire die. However, in other embodiments,separate base grids can be projected across separate regions of the dieto support different feature-to-feature spacing requirements within theseparate regions of the die. FIG. 3B is an illustration showing separatebase grids projected across separate regions of the die, in accordancewith an exemplary embodiment of the present invention.

The base grid is defined with consideration for the light interactionfunction, i.e., the sinc function, and the manufacturing capability,wherein the manufacturing capability is defined by the manufacturingequipment and processes to be utilized in fabricating the dynamic array.With regard to the light interaction function, the base grid is definedsuch that the spacing between gridpoints enables alignment of peaks inthe sinc functions describing the light energy projected uponneighboring gridpoints. Therefore, linear-shaped features optimized forlithographic reinforcement can be specified by drawing a line from afirst gridpoint to a second gridpoint, wherein the line represents arectangular structure of a given width. It should be appreciated thatthe various linear-shaped features in each layer can be specifiedaccording to their endpoint locations on the base grid and their width.

FIG. 3C is an illustration showing an exemplary linear-shaped feature301 defined to be compatible with the dynamic array, in accordance withone embodiment of the present invention. The linear-shaped feature 301has a substantially rectangular cross-section defined by a width 303 anda height 307. The linear-shaped feature 301 extends in a lineardirection to a length 305. In one embodiment, a cross-section of thelinear-shaped feature, as defined by its width 303 and height 307, issubstantially uniform along its length 305. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 301. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature may be orientedto have its length 305 extend in either the first reference direction(x), the second reference direction (y), or in diagonal directiondefined relative to the first and second reference directions (x) and(y). Regardless of the linear-shaped features' particular orientationwith respect to the first and second reference directions (x) and (y),it should be understood that the linear-shaped feature is defined in aplane that is substantially parallel to a top surface of the substrateupon which the dynamic array is built. Also, it should be understoodthat the linear-shaped feature is free of bends, i.e., change indirection, in the plane defined by the first and second referencedirections.

FIG. 3D is an illustration showing another exemplary linear-shapedfeature 317 defined to be compatible with the dynamic array, inaccordance with one embodiment of the present invention. Thelinear-shaped feature 317 has a trapezoidal cross-section defined by alower width 313, an upper width 315, and a height 309. The linear-shapedfeature 317 extends in a linear direction to a length 311. In oneembodiment, the cross-section of the linear-shaped feature 317 issubstantially uniform along its length 311. It should be understood,however, that lithographic effects may cause a rounding of the ends ofthe linear-shaped feature 317. The first and second reference directions(x) and (y), respectively, of FIG. 3A are shown to illustrate anexemplary orientation of the linear-shaped feature on the dynamic array.It should be appreciated that the linear-shaped feature 317 may beoriented to have its length 311 extend in either the first referencedirection (x), the second reference direction (y), or in diagonaldirection defined relative to the first and second reference directions(x) and (y). Regardless of the particular orientation of thelinear-shaped feature 317 with regard to the first and second referencedirections (x) and (y), it should be understood that the linear-shapedfeature 317 is defined in a plane that is substantially parallel to atop surface of the substrate upon which the dynamic array is built.Also, it should be understood that the linear-shaped feature 317 is freeof bends, i.e., change in direction, in the plane defined by the firstand second reference directions.

Although FIGS. 3C and 3D explicitly discuss linear shaped featureshaving rectangular and trapezoidal cross-sections, respectively, itshould be understood that the linear shaped features having other typesof cross-sections can be defined within the dynamic array. Therefore,essentially any suitable cross-sectional shape of the linear-shapedfeature can be utilized so long as the linear-shaped feature is definedto have a length that extends in one direction, and is oriented to haveits length extend in either the first reference direction (x), thesecond reference direction (y), or in diagonal direction definedrelative to the first and second reference directions (x) and (y).

The layout architecture of the dynamic array follows the base gridpattern. Thus, it is possible to use grid points to represent wherechanges in direction occur in diffusion, wherein gate electrode andmetal linear-shaped features are placed, where contacts are placed,where opens are in the linear-shaped gate electrode and metal features,etc. The pitch of the gridpoints, i.e., the gridpoint-to-gridpointspacing, should be set for a given feature line width, e.g., width 303in FIG. 3C, such that exposure of neighboring linear-shaped features ofthe given feature line width will reinforce each other, wherein thelinear-shaped features are centered on gridpoints. With reference to thedynamic array stack of FIG. 2 and the exemplary base grid of FIG. 3A, inone embodiment, the gridpoint spacing in the first reference direction(x) is set by the required gate electrode gate pitch. In this sameembodiment, the gridpoint pitch in the second reference direction (y) isset by the metal 1 and metal 3 pitch. For example, in a 90 nm processtechnology, i.e., minimum feature size equal to 90 nm, the gridpointpitch in the second reference direction (y) is about 0.24 micron. In oneembodiment, metal 1 and metal 2 layers will have a common spacing andpitch. A different spacing and pitch may be used above the metal 2layer.

The various layers of the dynamic array are defined such that thelinear-shaped features in adjacent layers extend in a crosswise mannerwith respect to each other. For example, the linear-shaped features ofadjacent layers may extend orthogonally, i.e., perpendicularly withrespect to each other. Also, the linear-shaped features of one layer mayextend across the linear-shaped features of an adjacent layer at anangle, e.g., at about 45 degrees. For example, in one embodiment thelinear-shaped feature of one layer extend in the first referencedirection (x) and the linear-shaped features of the adjacent layerextend diagonally with respect to the first (x) and second (y) referencedirections. It should be appreciated that to route a design in thedynamic array having the linear-shaped features positioned in thecrosswise manner in adjacent layers, opens can be defined in thelinear-shaped features, and contacts and vias can be defined asnecessary.

The dynamic array minimizes the use of bends in layout shapes toeliminate unpredictable lithographic interactions. Specifically, priorto OPC or other RET processing, the dynamic array allows bends in thediffusion layer to enable control of device sizes, but does not allowbends in layers above the diffusion layer. The layout features in eachlayer above the diffusion layer are linear in shape, e.g., FIG. 3C, anddisposed in a parallel relationship with respect to each other. Thelinear shapes and parallel positioning of layout features areimplemented in each stack layer of the dynamic array wherepredictability of constructive light interference is necessary to ensuremanufacturability. In one embodiment, the linear shapes and parallelpositioning of layout features are implemented in the dynamic array ineach layer above diffusion through metal 2. Above metal 2, the layoutfeatures may be of sufficient size and shape that constructive lightinterference is not required to ensure manufacturability. However, thepresence of constructive light interference in patterning layoutfeatures above metal 2 may be beneficial.

An exemplary buildup of dynamic array layers from diffusion throughmetal 2 are described with respect to FIGS. 4 through 14. It should beappreciated that the dynamic array described with respect to FIGS. 4through 14 is provided by way of example only, and is not intended toconvey limitations of the dynamic array architecture. The dynamic arraycan be used in accordance with the principles presented herein to defineessentially any integrated circuit design.

FIG. 4 is an illustration showing a diffusion layer layout of anexemplary dynamic array, in accordance with one embodiment of thepresent invention. The diffusion layer of FIG. 4 shows a p-diffusionregion 401 and an n-diffusion region 403. While the diffusion regionsare defined according to the underlying base grid, the diffusion regionsare not subject to the linear-shaped feature restrictions associatedwith the layers above the diffusion layer. The diffusion regions 401 and403 include diffusion squares 405 defined where diffusion contacts willbe located. The diffusion regions 401 and 403 do not include extraneousjogs or corners, thus improving the use of lithographic resolution andenabling more accurate device extraction. Additionally, n+ mask regions(412 and 416) and p+ mask regions (410 and 414) are defined asrectangles on the (x), (y) grid with no extraneous jogs or notches. Thisstyle permits use of larger diffusion regions, eliminates need forOPC/RET, and enables use of lower resolution and lower cost lithographicsystems, e.g., i-line illumination at 365 nm. It should be appreciatedthat the n+ mask region 416 and the p+ mask region 410, as depicted inFIG. 4, are for an embodiment that does not employ well-biasing. In analternative embodiment where well-biasing is to be used, the n+ maskregion 416 shown in FIG. 4 will actually be defined as a p+ mask region.Also, in this alternative embodiment, the p+ mask region 410 shown inFIG. 4 will actually be defined as a n+ mask region.

FIG. 5 is an illustration showing a gate electrode layer and a diffusioncontact layer above and adjacent to the diffusion layer of FIG. 4, inaccordance with one embodiment of the present invention. As thoseskilled in the CMOS arts will appreciate, the gate electrode features501 define the transistor gates. The gate electrode features 501 aredefined as linear shaped features extending in a parallel relationshipacross the dynamic array in the second reference direction (y). In oneembodiment, the gate electrode features 501 are defined to have a commonwidth. However, in another embodiment, one or more of the gate electrodefeatures can be defined to have a different width. For example, FIG. 5shows a gate electrode features 501A that has a larger width relative tothe other gate electrode features 501. The pitch (center-to-centerspacing) of the gate electrode features 501 is minimized while ensuringoptimization of lithographic reinforcement, i.e., resonant imaging,provided by neighboring gate electrode features 501. For discussionpurposes, gate electrode features 501 extending across the dynamic arrayin a given line are referred to as a gate electrode track.

The gate electrode features 501 form n-channel and p-channel transistorsas they cross the diffusion regions 403 and 401, respectively. Optimalgate electrode feature 501 printing is achieved by drawing gateelectrode features 501 at every grid location, even though no diffusionregion may be present at some grid locations. Also, long continuous gateelectrode features 501 tend to improve line end shortening effects atthe ends of gate electrode features within the interior of the dynamicarray. Additionally, gate electrode printing is significantly improvedwhen all bends are removed from the gate electrode features 501.

Each of the gate electrode tracks may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given gate electrode track isrequired to be interrupted, the separation between ends of the gateelectrode track segments at the point of interruption is minimized tothe extent possible taking into consideration the manufacturingcapability and electrical effects. In one embodiment, optimalmanufacturability is achieved when a common end-to-end spacing is usedbetween features within a particular layer.

Minimizing the separation between ends of the gate electrode tracksegments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring gate electrode tracks. Also, in one embodiment, if adjacentgate electrode tracks need to be interrupted, the interruptions of theadjacent gate electrode tracks are made such that the respective pointsof interruption are offset from each other so as to avoid, to the extentpossible, an occurrence of neighboring points of interruption. Morespecifically, points of interruption within adjacent gate electrodetracks are respectively positioned such that a line of sight does notexist through the points of interruption, wherein the line of sight isconsidered to extend perpendicularly to the direction in which the gateelectrode tracks extend over the substrate. Additionally, in oneembodiment, the gate electrodes may extend through the boundaries at thetop and bottom of the cells, i.e., the PMOS or NMOS cells. Thisembodiment would enable bridging of neighboring cells.

With further regard to FIG. 5, diffusion contacts 503 are defined ateach diffusion square 405 to enhance the printing of diffusion contactsvia resonant imaging. The diffusion squares 405 are present around everydiffusion contact 503 to enhance the printing of the power and groundconnection polygons at the diffusion contacts 503.

The gate electrode features 501 and diffusion contacts 503 share acommon grid spacing. More specifically, the gate electrode feature 501placement is offset by one-half the grid spacing relative to thediffusion contacts 503. For example, if the gate electrode features 501and diffusion contact 503 grid spacing is 0.36 μm, then the diffusioncontacts are placed such that the x-coordinate of their center falls onan integer multiple of 0.36 μm, while the x-coordinate of the center ofeach gate electrode feature 501 minus 0.18 μm should be an integermultiple of 0.36 μm. In the present example, the x-coordinates arerepresented by the following:

Diffusion contact center x-coordinate=I*0.36 μm, where I is the gridnumber; Gate electrode feature center x-coordinate=0.18 μm+I*0.36 μm,where I is the grid number.

The grid based system of the dynamic array ensures that all contacts(diffusion and gate electrode) will land on a horizontal grid that isequal to a multiple of one-half of the diffusion contact grid and avertical grid that is set by the metal 1 pitch. In the example above,the gate electrode feature and diffusion contact grid is 0.36 μm. Thediffusion contacts and gate electrode contacts will land on a horizontalgrid that is a multiple of 0.18 μm. Also, the vertical grid for 90 nmprocess technologies is about 0.24 μm.

FIG. 6 is an illustration showing a gate electrode contact layer definedabove and adjacent to the gate electrode layer of FIG. 5, in accordancewith one embodiment of the present invention. In the gate electrodecontact layer, gate electrode contacts 601 are drawn to enableconnection of the gate electrode features 501 to the overlying metalconduction lines. In general, design rules will dictate the optimumplacement of the gate electrode contacts 601. In one embodiment, thegate electrode contacts are drawn on top of the transistor endcapregions. This embodiment minimizes white space in the dynamic array whendesign rules specify long transistor endcaps. In some processtechnologies white space may be minimized by placing a number of gateelectrode contacts for a cell in the center of the cell. Also, it shouldbe appreciated that in the present invention, the gate electrode contact601 is oversized in the direction perpendicular to the gate electrodefeature 501 to ensure overlap between the gate electrode contact 601 andthe gate electrode feature 501.

FIG. 7A is an illustration showing a traditional approach for makingcontact to a gate electrode, e.g., polysilicon feature. In thetraditional configuration of FIG. 7A, an enlarged rectangular gateelectrode region 707 is defined where a gate electrode contact 709 is tobe located. The enlarged rectangular gate electrode region 707introduces a bend of distance 705 in the gate electrode. The bendassociated with the enlarged rectangular gate electrode region 707 setsup undesirable light interactions and distorts the gate electrode line711. Distortion of the gate electrode line 711 is especially problematicwhen the gate electrode width is about the same as a transistor length.

FIG. 7B is an illustration showing a gate electrode contact 601, e.g.,polysilicon contact, defined in accordance with one embodiment of thepresent invention. The gate electrode contact 601 is drawn to overlapthe edges of the gate electrode feature 501, and extend in a directionsubstantially perpendicular to the gate electrode feature 501. In oneembodiment, the gate electrode contact 601 is drawn such that thevertical dimension 703 is same as the vertical dimension used for thediffusion contacts 503. For example, if the diffusion contact 503opening is specified to be 0.12 μm square then the vertical dimension ofthe gate electrode contact 601 is drawn at 0.12 μm. However, in otherembodiments, the gate electrode contact 601 can be drawn such that thevertical dimension 703 is different from the vertical dimension used forthe diffusion contacts 503.

In one embodiment, the gate electrode contact 601 extension 701 beyondthe gate electrode feature 501 is set such that maximum overlap isachieved between the gate electrode contact 601 and the gate electrodefeature 501. The extension 701 is defined to accommodate line endshortening of the gate electrode contact 601, and misalignment betweenthe gate electrode contact layer and gate electrode feature layer. Thelength of the gate electrode contact 601 is defined to ensure maximumsurface area contact between the gate electrode contact 601 and the gateelectrode feature 501, wherein the maximum surface area contact isdefined by the width of the gate electrode feature 501.

FIG. 8A is an illustration showing a metal 1 layer defined above thegate electrode contact layer of FIG. 6, in accordance with oneembodiment of the present invention. The metal 1 layer includes a numberof metal 1 tracks 801-821 defined to include linear shaped featuresextending in a parallel relationship across the dynamic array. The metal1 tracks 801-821 extend in a direction substantially perpendicular tothe gate electrode features 501 in the underlying gate electrode layerof FIG. 5. Thus, in the present example, the metal 1 tracks 801-821extend linearly across the dynamic array in the first referencedirection (x). The pitch (center-to-center spacing) of the metal 1tracks 801-821 is minimized while ensuring optimization of lithographicreinforcement, i.e., resonant imaging, provided by neighboring metal 1tracks 801-821. For example, in one embodiment, the metal 1 tracks801-821 are centered on a vertical grid of about 0.24 μm for a 90 nmprocess technology.

Each of the metal 1 tracks 801-821 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 1 track 801-821 isrequired to be interrupted, the separation between ends of the metal 1track segments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing capability andelectrical effects. Minimizing the separation between ends of the metal1 track segments at the points of interruption serves to maximize thelithographic reinforcement, and uniformity thereof, provided fromneighboring metal 1 tracks. Also, in one embodiment, if adjacent metal 1tracks need to be interrupted, the interruptions of the adjacent metal 1tracks are made such that the respective points of interruption areoffset from each other so as to avoid, to the extent possible, anoccurrence of neighboring points of interruption. More specifically,points of interruption within adjacent metal 1 tracks are respectivelypositioned such that a line of sight does not exist through the pointsof interruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 1 tracks extend overthe substrate.

In the example of FIG. 8A, the metal 1 track 801 is connected to theground supply, and the metal 1 track 821 is connected to the powersupply voltage. In the embodiment of FIG. 8A, the widths of the metal 1tracks 801 and 821 are the same as the other metal 1 tracks 803-819.However, in another embodiment, the widths of metal 1 tracks 801 and 821are larger than the widths of the other metal 1 tracks 803-819. FIG. 8Bis an illustration showing the metal 1 layer of FIG. 8A with largertrack widths for the metal 1 ground and power tracks (801A and 821A),relative to the other metal 1 tracks 803-819.

The metal 1 track pattern is optimally configured to optimize the use of“white space” (space not occupied by transistors). The example of FIG.8A includes the two shared metal 1 power tracks 801 and 821, and ninemetal 1 signal tracks 803-819. Metal 1 tracks 803, 809, 811, and 819 aredefined as gate electrode contact tracks in order to minimize whitespace. Metal 1 tracks 805 and 807 are defined to connect to n-channeltransistor source and drains. Metal 1 tracks 813, 815, and 817 aredefined to connect to p-channel source and drains. Also, any of the ninemetal 1 signal tracks 803-819 can be used as a feed through if noconnection is required. For example, metal 1 tracks 813 and 815 areconfigured as feed through connections.

FIG. 9 is an illustration showing a via 1 layer defined above andadjacent to the metal 1 layer of FIG. 8A, in accordance with oneembodiment of the present invention. Vias 901 are defined in the via 1layer to enable connection of the metal 1 tracks 801-821 to higher levelconduction lines.

FIG. 10 is an illustration showing a metal 2 layer defined above andadjacent to the via 1 layer of FIG. 9, in accordance with one embodimentof the present invention. The metal 2 layer includes a number of metal 2tracks 1001 defined as linear shaped features extending in a parallelrelationship across the dynamic array. The metal 2 tracks 1001 extend ina direction substantially perpendicular to the metal 1 tracks 801-821 inthe underlying metal 1 layer of FIG. 8A, and in a directionsubstantially parallel to the gate electrode tracks 501 in theunderlying gate electrode layer of FIG. 5. Thus, in the present example,the metal 2 tracks 1001 extend linearly across the dynamic array in thesecond reference direction (y).

The pitch (center-to-center spacing) of the metal 2 tracks 1001 isminimized while ensuring optimization of lithographic reinforcement,i.e., resonant imaging, provided by neighboring metal 2 tracks. Itshould be appreciated that regularity can be maintained on higher levelinterconnect layers in the same manner as implemented in the gateelectrode and metal 1 layers. In one embodiment, the gate electrodefeature 501 pitch and the metal 2 track pitch is the same. In anotherembodiment, the contacted gate electrode pitch (e.g.,polysilicon-to-polysilicon space with a diffusion contact in between) isgreater than the metal 2 track pitch. In this embodiment, the metal 2track pitch is optimally set to be ⅔ or ¾ of the contacted gateelectrode pitch. Thus, in this embodiment, the gate electrode track andmetal 2 track align at every two gate electrode track pitches and everythree metal 2 track pitches. For example, in a 90 nm process technology,the optimum contacted gate electrode track pitch is 0.36 μm, and theoptimum metal 2 track pitch is 0.24 μm. In another embodiment, the gateelectrode track and the metal 2 track align at every three gateelectrode pitches and every four metal 2 pitches. For example, in a 90nm process technology, the optimum contacted gate electrode track pitchis 0.36 μm, and the optimum metal 2 track pitch is 0.27 μm.

Each of the metal 2 tracks 1001 may be interrupted, i.e., broken, anynumber of times in linearly traversing across the dynamic array in orderto provide required electrical connectivity for a particular logicfunction to be implemented. When a given metal 2 track 1001 is requiredto be interrupted, the separation between ends of the metal 2 tracksegments at the point of interruption is minimized to the extentpossible taking into consideration manufacturing and electrical effects.Minimizing the separation between ends of the metal 2 track segments atthe points of interruption serves to maximize the lithographicreinforcement, and uniformity thereof, provided from neighboring metal 2tracks. Also, in one embodiment, if adjacent metal 2 tracks need to beinterrupted, the interruptions of the adjacent metal 2 tracks are madesuch that the respective points of interruption are offset from eachother so as to avoid, to the extent possible, an occurrence ofneighboring points of interruption. More specifically, points ofinterruption within adjacent metal 2 tracks are respectively positionedsuch that a line of sight does not exist through the points ofinterruption, wherein the line of sight is considered to extendperpendicularly to the direction in which the metal 2 tracks extend overthe substrate.

As discussed above, the conduction lines in a given metal layer abovethe gate electrode layer may traverse the dynamic array in a directioncoincident with either the first reference direction (x) or the secondreference direction (y). It should be further appreciated that theconduction lines in a given metal layer above the gate electrode layermay traverse the dynamic array in a diagonal direction relative to thefirst and second reference directions (x) and (y). FIG. 11 is anillustration showing conductor tracks 1101 traversing the dynamic arrayin a first diagonal direction relative to the first and second referencedirections (x) and (y), in accordance with one embodiment of the presentinvention. FIG. 12 is an illustration showing conductor tracks 1201traversing the dynamic array in a second diagonal direction relative tothe first and second reference directions (x) and (y), in accordancewith one embodiment of the present invention.

As with the metal 1 and metal 2 tracks discussed above, the diagonaltraversing conductor tracks 1101 and 1201 of FIGS. 11 and 12 may beinterrupted, i.e., broken, any number of times in linearly traversingacross the dynamic array in order to provide required electricalconnectivity for a particular logic function to be implemented. When agiven diagonal traversing conductor track is required to be interrupted,the separation between ends of the diagonal conductor track at the pointof interruption is minimized to the extent possible taking intoconsideration manufacturing and electrical effects. Minimizing theseparation between ends of the diagonal conductor track at the points ofinterruption serves to maximize the lithographic reinforcement, anduniformity thereof, provided from neighboring diagonal conductor tracks.

An optimal layout density within the dynamic array is achieved byimplementing the following design rules:

-   -   at least two metal 1 tracks be provided across the n-channel        device area;    -   at least two metal 1 tracks be provided across the p-channel        device area;    -   at least two gate electrode tracks be provided for the n-channel        device; and    -   at least two gate electrode tracks be provided for the p-channel        device.

Contacts and vias are becoming the most difficult mask from alithographic point of view. This is because the contacts and vias aregetting smaller, more closely spaced, and are randomly distributed. Thespacing and density of the cuts (contact or vias) makes it extremelydifficult to reliably print the shapes. For example, cut shapes may beprinted improperly due to destructive interference patterns fromneighboring shapes or lack of energy on lone shapes. If a cut isproperly printed, the manufacturing yield of the associated contact orvia is extremely high. Sub-resolution contacts can be provided toreinforce the exposure of the actual contacts, so long as thesub-resolution contacts do not resolve. Also, the sub-resolutioncontacts can be of any shape so long as they are smaller than theresolution capability of the lithographic process.

FIG. 13A is an illustration showing an example of a sub-resolutioncontact layout used to lithographically reinforce diffusion contacts andgate electrode contacts, in accordance with one embodiment of thepresent invention. Sub-resolution contacts 1301 are drawn such that theyare below the resolution of the lithographic system and will not beprinted. The function of the sub-resolution contacts 1301 is to increasethe light energy at the desired contact locations, e.g., 503, 601,through resonant imaging. In one embodiment, sub-resolution contacts1301 are placed on a grid such that both gate electrode contacts 601 anddiffusion contacts 503 are lithographically reinforced. For example,sub-resolution contacts 1301 are placed on a grid that is equal toone-half the diffusion contact 503 grid spacing to positively impactboth gate electrode contacts 601 and diffusion contacts 503. In oneembodiment, a vertical spacing of the sub-resolution contacts 1301follows the vertical spacing of the gate electrode contacts 601 anddiffusion contacts 503.

Grid location 1303 in FIG. 13A denotes a location between adjacent gateelectrode contacts 601. Depending upon the lithographic parameters inthe manufacturing process, it is possible that a sub-resolution contact1301 at this grid location would create an undesirable bridge betweenthe two adjacent gate electrode contacts 601. If bridging is likely tooccur, a sub-resolution contact 1301 at location 1303 can be omitted.Although FIG. 13A shows an embodiment where sub-resolution contacts areplaced adjacent to actual features to be resolved and not elsewhere, itshould be understood that another embodiment may place a sub-resolutioncontact at each available grid location so as to fill the grid.

FIG. 13B is an illustration showing the sub-resolution contact layout ofFIG. 13A with sub-resolution contacts defined to fill the grid to theextent possible, in accordance with one embodiment of the presentinvention. It should be appreciated that while the embodiment of FIG.13B fills the grid to the extent possible with sub-resolution contacts,placement of sub-resolution contacts is avoided at locations that wouldpotentially cause undesirable bridging between adjacent fully resolvedfeatures.

FIG. 13C is an illustration showing an example of a sub-resolutioncontact layout utilizing various shaped sub-resolution contacts, inaccordance with one embodiment of the present invention. Alternativesub-resolution contact shapes can be utilized so long as thesub-resolution contacts are below the resolution capability of themanufacturing process. FIG. 13C shows the use of “X-shaped”sub-resolution contacts 1305 to focus light energy at the corners of theadjacent contacts. In one embodiment, the ends of the X-shapedsub-resolution contact 1305 are extended to further enhance thedeposition of light energy at the corners of the adjacent contacts.

FIG. 13D is an illustration showing an exemplary implementation ofalternate phase shift masking (APSM) with sub-resolution contacts, inaccordance with one embodiment of the present invention. As in FIG. 13A,sub-resolution contacts are utilized to lithographically reinforcediffusion contacts 503 and gate electrode contacts 601. APSM is used toimprove resolution when neighboring shapes create destructiveinterference patterns. The APSM technique modifies the mask so that thephase of light traveling through the mask on neighboring shapes is 180degrees out of phase. This phase shift serves to remove destructiveinterference and allowing for greater contact density. By way ofexample, contacts in FIG. 13D marked with a plus “+” sign representcontacts exposed with light waves of a first phase while contacts markedwith a minus sign “−” represent contacts exposed with light waves thatare shifted in phase by 180 degrees relative to the first phase used forthe “+” sign contacts. It should be appreciated that the APSM techniqueis utilized to ensure that adjacent contacts are separated from eachother.

As feature sizes decrease, semiconductor dies are capable of includingmore gates. As more gates are included, however, the density of theinterconnect layers begins to dictate the die size. This increasingdemand on the interconnect layers drives higher levels of interconnectlayers. However, the stacking of interconnect layers is limited in partby the topology of the underlying layers. For example, as interconnectlayers are built up, islands, ridges, and troughs can occur. Theseislands, ridges, and troughs can cause breaks in the interconnect linesthat cross them.

To mitigate these islands and troughs, the semiconductor manufacturingprocess utilizes a chemical mechanical polishing (CMP) procedure tomechanically and chemically polish the surface of the semiconductorwafer such that each subsequent interconnect layer is deposited on asubstantially flat surface. Like the photolithography process thequality of the CMP process is layout pattern dependent. Specifically, anuneven distribution of a layout features across a die or a wafer cancause too much material to be removed in some places and not enoughmaterial to be removed in other places, thus causing variations in theinterconnect thickness and unacceptable variations in the capacitanceand resistance of the interconnect layer. The capacitance and resistancevariation within the interconnect layer may alter the timing of acritical net causing design failure.

The CMP process requires that dummy fill be added in the areas withoutinterconnect shapes so that a substantially uniform wafer topology isprovided to avoid dishing and improve center-to-edge uniformity.Traditionally, dummy fill is placed post-design. Thus, in thetraditional approach the designer is not aware of the dummy fillcharacteristics. Consequently, the dummy fill placed post-design mayadversely influence the design performance in a manner that has not beenevaluated by the designer. Also, because the conventional topology priorto the dummy fill is unconstrained, i.e., non-uniform, the post-designdummy fill will not be uniform and predictable. Therefore, in theconventional process, the capacitive coupling between the dummy fillregions and the neighboring active nets cannot be predicted by thedesigner.

As previously discussed, the dynamic array disclosed herein providesoptimal regularity by maximally filling all interconnect tracks fromgate electrode layer upward. If multiple nets are required in a singleinterconnect track, the interconnect track is split with a minimallyspaced gap. For example, track 809 representing the metal 1 conductionline in FIG. 8A represents three separate nets in the same track, whereeach net corresponds to a particular track segment. More specifically,there are two poly contact nets and a floating net to fill the trackwith minimal spacing between the track segments. The substantiallycomplete filling of tracks maintains the regular pattern that createsresonant images across the dynamic array. Also, the regular architectureof the dynamic array with maximally filled interconnect tracks ensuresthat the dummy fill is placed in a uniform manner across the die.Therefore, the regular architecture of the dynamic array assists the CMPprocess to produce substantially uniform results across the die/wafer.Also, the regular gate pattern of the dynamic array assists with gateetching uniformity (microloading). Additionally, the regulararchitecture of the dynamic array combined with the maximally filledinterconnect tracks allows the designer to analyze the capacitivecoupling effects associated with the maximally filled tracks during thedesign phase and prior to fabrication.

Because the dynamic array sets the size and spacing of the linearlyshaped features, i.e., tracks and contacts, in each mask layer, thedesign of the dynamic array can be optimized for the maximum capabilityof the manufacturing equipment and processes. That is to say, becausethe dynamic array is restricted to the regular architecture for eachlayer above diffusion, the manufacturer is capable of optimizing themanufacturing process for the specific characteristics of the regulararchitecture. It should be appreciated that with the dynamic array, themanufacturer does not have to be concerned with accommodating themanufacture of a widely varying set of arbitrarily-shaped layoutfeatures as is present in conventional unconstrained layouts.

An example of how the capability of manufacturing equipment can beoptimized is provided as follows. Consider that a 90 nm process has ametal 2 pitch of 280 nm. This metal 2 pitch of 280 nm is not set by themaximum capability of equipment. Rather, this metal 2 pitch of 280 nm isset by the lithography of the vias. With the via lithography issuesremoved, the maximum capability of the equipment allows for a metal 2pitch of about 220 nm. Thus, the design rules for metal 2 pitch includeabout 25% margin to account for the light interaction unpredictabilityin the via lithography.

The regular architecture implemented within the dynamic array allows thelight interaction unpredictability in the via lithography to be removed,thus allowing for a reduction in the metal 2 pitch margin. Such areduction in the metal 2 pitch margin allows for a more dense design,i.e., allows for optimization of chip area utilization. Additionally,with the restricted, i.e., regular, topology afforded by the dynamicarray, the margin in the design rules can be reduced. Moreover, not onlycan the excess margin beyond the capability of the process be reduced,the restricted topology afforded by the dynamic array also allows thenumber of required design rules to be substantially reduced. Forexample, a typical design rule set for an unconstrained topology couldhave more than 600 design rules. A design rule set for use with thedynamic array may have about 45 design rules. Therefore, the effortrequired to analyze and verify the design against the design rules isdecreased by more than a factor of ten with the restricted topology ofthe dynamic array.

When dealing with line end-to-line end gaps (i.e., tracksegment-to-track segment gaps) in a given track of a mask layer in thedynamic array, a limited number of light interactions exist. Thislimited number of light interactions can be identified, predicted, andaccurately compensated for ahead of time, dramatically reducing orcompletely eliminating the requirement for OPC/RET. The compensation forlight interactions at line end-to-line end gaps represents alithographic modification of the as-drawn feature, as opposed to acorrection based on modeling of interactions, e.g., OPC/RET, associatedwith the as-drawn feature.

Also, with the dynamic array, changes to the as-drawn layout are onlymade where needed. In contrast, OPC is performed over an entire layoutin a conventional design flow. In one embodiment, a correction model canbe implemented as part of the layout generation for the dynamic array.For example, due to the limited number of possible line end gapinteractions, a router can be programmed to insert a line break havingcharacteristics defined as a function of its surroundings, i.e., as afunction of its particular line end gap light interactions. It should befurther appreciated that the regular architecture of the dynamic arrayallows the line ends to be adjusted by changing vertices rather than byadding vertices. Thus, in contrast with unconstrained topologies thatrely on the OPC process, the dynamic array significantly reduces thecost and risk of mask production. Also, because the line end gapinteractions in the dynamic array can be accurately predicted in thedesign phase, compensation for the predicted line end gap interactionsduring the design phase does not increase risk of design failure.

In conventional unconstrained topologies, designers are required to haveknowledge of the physics associated with the manufacturing process dueto the presence of design dependent failures. With the grid-based systemof the dynamic array as disclosed herein, the logical design can beseparated from the physical design. More specifically, with the regulararchitecture of the dynamic array, the limited number of lightinteractions to be evaluated within the dynamic array, and the designindependent nature of the dynamic array, designs can be representedusing a grid point based netlist, as opposed to a physical netlist.

With the dynamic array, the design is not required to be represented interms of physical information. Rather, the design can be represented asa symbolic layout. Thus, the designer can represent the design from apure logic perspective without having to represent physicalcharacteristics, e.g., sizes, of the design. It should be understoodthat the grid-based netlist, when translated to physical, matches theoptimum design rules exactly for the dynamic array platform. When thegrid-based dynamic array moves to a new technology, e.g., smallertechnology, a grid-based netlist can be moved directly to the newtechnology because there is no physical data in the designrepresentation. In one embodiment, the grid-based dynamic array systemincludes a rules database, a grid-based (symbolic) netlist, and thedynamic array architecture.

It should be appreciated that the grid-based dynamic array eliminatestopology related failures associated with conventional unconstrainedarchitectures. Also, because the manufacturability of the grid-baseddynamic array is design independent, the yield of the design implementedon the dynamic array is independent of the design. Therefore, becausethe validity and yield of the dynamic array is preverified, thegrid-based netlist can be implemented on the dynamic array withpreverified yield performance.

FIG. 14 is an illustration showing a semiconductor chip structure 1400,in accordance with one embodiment of the present invention. Thesemiconductor chip structure 1400 represents an exemplary portion of asemiconductor chip, including a diffusion region 1401 having a number ofconductive lines 1403A-1403G defined thereover. The diffusion region1401 is defined in a substrate 1405, to define an active region for atleast one transistor device. The diffusion region 1401 can be defined tocover an area of arbitrary shape relative to the substrate 1405 surface.

The conductive lines 1403A-1403G are arranged to extend over thesubstrate 1405 in a common direction 1407. It should also be appreciatedthat each of the number of conductive lines 1403A-1403G are restrictedto extending over the diffusion region 1401 in the common direction1407. In one embodiment, the conductive lines 1403A-1403G definedimmediately over the substrate 1405 are polysilicon lines. In oneembodiment, each of the conductive lines 1403A-1403G is defined to haveessentially the same width 1409 in a direction perpendicular to thecommon direction 1407 of extension. In another embodiment, some of theconductive lines 1403A-1403G are defined to have different widthsrelative to the other conductive lines. However, regardless of the widthof the conductive lines 1403A-1403G, each of the conductive lines1403A-1403G is spaced apart from adjacent conductive lines according toessentially the same center-to-center pitch 1411.

As shown in FIG. 14, some of the conductive lines (1403B-1403E) extendover the diffusion region 1401, and other conductive lines (1403A,1403F, 1403G) extend over non-diffusion portions the substrate 1405. Itshould be appreciated that the conductive lines 1403A-1403G maintaintheir width 1409 and pitch 1411 regardless of whether they are definedover diffusion region 1401 or not. Also, it should be appreciated thatthe conductive lines 1403A-1403G maintain essentially the same length1413 regardless of whether they are defined over diffusion region 1401or not, thereby maximizing lithographic reinforcement between theconductive lines 1403A-1403G across the substrate. In this manner, someof the conductive lines, e.g., 1403D, defined over the diffusion region1401 include a necessary active portion 1415, and one or more uniformityextending portions 1417.

It should be appreciated that the semiconductor chip structure 1400represents a portion of the dynamic array described above with respectto FIGS. 2-13D. Therefore, it should be understood that the uniformityextending portions 1417 of the conductive lines (1403B-1403E) arepresent to provide lithographic reinforcement of neighboring conductivelines 1403A-1403G. Also, although they may not be required for circuitoperation, each of conductive lines 1403A, 1403F, and 1403G are presentto provide lithographic reinforcement of neighboring conductive lines1403A-1403G.

The concept of the necessary active portion 1415 and the uniformityextending portions 1417 also applies to higher level interconnectlayers. As previously described with regard to the dynamic arrayarchitecture, adjacent interconnect layers traverse over the substratein transverse directions, e.g., perpendicular or diagonal directions, toenable routing/connectivity required by the logic device implementedwithin the dynamic array. As with the conductive lines 1403A-1403G, eachof the conductive lines within an interconnect layer may include arequired portion (necessary active portion) to enable requiredrouting/connectivity, and a non-required portion (uniformity extendingportion) to provide lithographic reinforcement to neighboring conductivelines. Also, as with the conductive lines 1403A-1403G, the conductivelines within an interconnect layer extend in a common direction over thesubstrate, have essentially the same width, and are spaced apart fromeach other according to an essentially constant pitch.

In one embodiment, conductive lines within an interconnect layer followessentially the same ratio between line width and line spacing. Forexample, at 90 nm the metal 4 pitch is 280 nm with a line width and linespacing equal to 140 nm. Larger conductive lines can be printed on alarger line pitch if the line width is equal to the line spacing.

FIG. 15 shows an example layout architecture defined in accordance withone embodiment of the present invention. The layout architecture followsa grid pattern and is based upon a horizontal grid and a vertical grid.The horizontal grid is set by the poly gate pitch. The vertical pitch isset by the metal 1/metal 3 pitch. All of the rectangular shapes shouldbe centered on a grid point. The layout architecture minimizes the useof bends to eliminate unpredictable lithographic interactions. Bends areallowed on the diffusion layer to control transistor device sizes. Otherlayers should be rectangular in shape and fixed in one dimension.

The invention described herein can be embodied as computer readable codeon a computer readable medium. The computer readable medium is any datastorage device that can store data which can be thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), read-only memory, random-accessmemory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes, and other optical andnon-optical data storage devices. The computer readable medium can alsobe distributed over a network coupled computer systems so that thecomputer readable code is stored and executed in a distributed fashion.Additionally, a graphical user interface (GUI) implemented as computerreadable code on a computer readable medium can be developed to providea user interface for performing any embodiment of the present invention.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention.

1. A semiconductor device, comprising: a number of N-diffusion and anumber of P-diffusion defined in a region of the semiconductor device,the number of N-diffusion arranged relative to the number of P-diffusionsuch that an inner non-diffusion region exists between the number ofN-diffusion collectively and the number of P-diffusion collectively; atleast six linear shapes extending along a first direction in a gatelayer region of the region of the semiconductor device such that each ofthe at least six linear shapes has its lengthwise centerline extendingin the first direction, the at least six linear shapes spaced apart fromeach other in accordance with an integer multiple of a first pitch asmeasured in a second direction perpendicular to the first directionbetween lengthwise centerlines of the at least six linear shapes,wherein each linear shape within the gate layer region is spaced apartfrom at least one other linear shape by a lengthwisecenterline-to-lengthwise centerline spacing as measured in the seconddirection that is substantially equal to the first pitch, and whereinall linear shapes within the gate layer region are within 1930nanometers of each other, and wherein some of the at least six linearshapes are gate defining shapes, and some of the gate defining shapesforming P-transistors with respective ones of the number of P-diffusion,and some of the gate defining shapes forming N-transistors withrespective ones of the number of N-diffusion, wherein the P-transistorsand N-transistors define a set of at least eight transistors in theregion of the semiconductor device, including, (a) a first N-transistor,a second N-transistor, a third N-transistor, and a fourth N-transistor,(b) a first P-transistor, a second P-transistor, a third P-transistor,and a fourth P-transistor, such that, (i) the first N and P transistorsaligned along the first direction and electrically connected to eachother through their gate defining shapes, (ii) the second N and Ptransistors aligned along the first direction and their gate definingshapes having extensions not electrically connected to each other, (iii)the third N and P transistors aligned along the first direction andtheir gate defining shapes having extensions not electrically connectedto each other, and (iv) the fourth N and P transistors aligned along thefirst direction and electrically connected to each other through theirgate defining shapes wherein either a) the N transistors are transistorsof a first transistor type and the P transistors are transistors of asecond transistor type, such that the first, second, third, and fourth Ntransistors are first, second, third, and fourth transistors of thefirst transistor type, and such that the first, second, third, andfourth P transistors are first, second, third, and fourth transistors ofthe second transistor type, or b) the P transistors are transistors of afirst transistor type and the N transistors are transistors of a secondtransistor type, such that the first, second, third, and fourth Ptransistors are first, second, third, and fourth transistors of thefirst transistor type, and such that the first, second, third, andfourth N transistors are first, second, third, and fourth transistors ofthe second transistor type; a first contact contacting the gate definingshape of the second transistor of the first transistor type; a secondcontact contacting the gate defining shape of the second transistor ofthe second transistor type; a third contact contacting the gate definingshape of the third transistor of the first transistor type; and a fourthcontact contacting the gate defining shape of the third transistor ofthe second transistor type, wherein only one of the first and thirdcontacts is positioned above and over the inner non-diffusion region. 2.A semiconductor device as recited in claim 1, further comprising: aninterconnect layer region of the region of the semiconductor device, theinterconnect layer region formed above the gate layer region, theinterconnect layer region including a first linear interconnect shapeextending along the first direction.
 3. A semiconductor device asrecited in claim 2, wherein the interconnect layer region includes asecond linear interconnect shape extending along the first direction,the second linear interconnect shape positioned next to and spaced apartfrom the first linear interconnect shape.
 4. A semiconductor device asrecited in claim 3, wherein the first and second linear interconnectshapes are positioned according to a second pitch as measured in thesecond direction, the second pitch being a fractional multiple of thefirst pitch.
 5. A semiconductor device as recited in claim 4, whereinthe second pitch is less than or equal to the first pitch.
 6. Asemiconductor device as recited in claim 5, wherein the fractionalmultiple of the first pitch is one.
 7. A semiconductor device as recitedin claim 6, wherein the gate layer region of the region of thesemiconductor device includes a linear shape extending along the firstdirection and positioned in accordance with the first pitch that is nota gate defining shape.
 8. A semiconductor device as recited in claim 1,further comprising: an interconnect layer region of the region of thesemiconductor device, the interconnect layer region formed above thegate layer region, the interconnect layer region including a firstlinear interconnect shape extending along the second direction.
 9. Asemiconductor device as recited in claim 8, wherein the interconnectlayer region includes a second linear interconnect shape extending alongthe second direction, the second linear interconnect shape positionednext to and spaced apart from the first linear interconnect shape.
 10. Asemiconductor device as recited in claim 1, wherein the gate definingshapes of the first transistor of the first transistor type and thefirst transistor of the second transistor type are part of a firstmultiple transistor gate defining shape, and wherein the gate definingshapes of the fourth transistor of the first transistor type and thefourth transistor of the second transistor type are part of a secondmultiple transistor gate defining shape, and wherein the at least sixlinear shapes includes a first additional linear shape positioned nextto and spaced apart from either the first multiple transistor gatedefining shape or the second multiple transistor gate defining shape.11. A semiconductor device as recited in claim 10, wherein the firstadditional linear shape is not a gate defining shape, and wherein thefirst additional linear shape has a size as measured in the seconddirection that is substantially equal to a size as measured in thesecond direction of the first or second multiple transistor gatedefining shape next to which the first additional linear shape ispositioned.
 12. A semiconductor device as recited in claim 11, whereinthe at least six linear shapes includes a second additional linear shapepositioned next to and spaced apart from the first additional linearshape, and wherein the second additional linear shape is not a gatedefining shape.
 13. A semiconductor device as recited in claim 10,wherein the at least six linear shapes includes a second additionallinear shape positioned next to and spaced apart from the firstadditional linear shape, the second additional linear shape including agate defining shape of a fifth N transistor and a gate defining shape ofa fifth P transistor.
 14. A semiconductor device as recited in claim 13,wherein the first additional linear shape is not a gate defining shape.15. A semiconductor device as recited in claim 1, wherein two of thefirst, second, third, and fourth N transistors are formed in part by afirst shared N diffusion, and wherein two of the first, second, third,and fourth P transistors are formed in part by a first shared Pdiffusion, and wherein the first shared N diffusion is electricallyconnected to the first shared P diffusion.
 16. A semiconductor device asrecited in claim 15, wherein the gate defining shapes of the first N andP transistors correspond to a first linear shape of the at least sixlinear shapes, and wherein the gate layer region includes a secondlinear shape extending along the first direction and positioned next toand spaced apart from the first linear shape by a lengthwisecenterline-to-lengthwise centerline spacing as measured in the seconddirection substantially equal to the first pitch, wherein the secondlinear shape is not a gate defining shape.
 17. A semiconductor device asrecited in claim 15, further comprising: an electrical connectionbetween the first shared N diffusion and the first shared P diffusionthat extends through at least two interconnect shapes respectivelycorresponding to at least two mask layers, wherein at least one of theat least two interconnect shapes is linear.
 18. A semiconductor deviceas recited in claim 17, wherein the at least two interconnect shapesthat respectively correspond to at least two mask layers are formed in asingle interconnect layer.
 19. A semiconductor device as recited inclaim 17, wherein the at least two interconnect shapes that respectivelycorrespond to at least two mask layers are respectively formed in twointerconnect layers.
 20. A semiconductor device as recited in claim 17,wherein the electrical connection between the first shared N diffusionand the first shared P diffusion includes a linear interconnect shapeextending along the first direction in a second interconnect layercounting upward from the gate layer region underlying the secondinterconnect layer.
 21. A semiconductor device as recited in claim 1,wherein the gate defining shape of the second transistor of the firsttransistor type corresponds to a first linear shape of the at least sixlinear shapes, wherein the gate defining shape of the second transistorof the second transistor type corresponds to a second linear shape ofthe at least six linear shapes, wherein the gate defining shape of thethird transistor of the first transistor type corresponds to a thirdlinear shape of the at least six linear shapes, wherein the gatedefining shape of the third transistor of the second transistor typecorresponds to a fourth linear shape of the at least six linear shapes,wherein the first, second, third, and fourth linear shapes haverespective inner ends that are positioned over the inner non-diffusionregion, and wherein either the inner ends of the first and third linearshapes are offset in the first direction relative to each other, or theinner ends of the second and fourth linear shapes are offset in thefirst direction relative to each other.
 22. A semiconductor device asrecited in claim 21, wherein the at least six linear shapes includes alinear shape that is not a gate defining shape.
 23. A semiconductordevice as recited in claim 21, further comprising: a first electricalconnection between the first and fourth linear shapes, the firstelectrical connection extending through a first number of interconnectlayers; and a second electrical connection between the second and thirdlinear shapes, the second electrical connection extending through asecond number of interconnect layers, wherein a count of the firstnumber of interconnect layers is different than a count of the secondnumber of interconnect layers.
 24. A semiconductor device as recited inclaim 23, wherein the at least six linear shapes includes a fifth linearshape that is not a gate defining shape, and wherein the fifth linearshape has a size as measured in the second direction that issubstantially equal to a size as measured in the second direction ofanother linear shape next to which the fifth linear shape is positioned.25. A semiconductor device as recited in claim 23, wherein the firstcontact is positioned a first contact-to-gate distance away from thesecond transistor of the first transistor type, and wherein the secondcontact is positioned a second contact-to-gate distance away from thesecond transistor of the second transistor type, wherein the thirdcontact is positioned a third contact-to-gate distance away from thethird transistor of the first transistor type, wherein the fourthcontact is positioned a fourth contact-to-gate distance away from thethird transistor of the second transistor type, and wherein at least twoof the first, second, third, and fourth contact-to-gate distances aredifferent.
 26. A semiconductor device as recited in claim 25, whereinthe at least six linear shapes includes a fifth linear shape that is nota gate defining shape, and wherein the fifth linear shape has a size asmeasured in the second direction that is substantially equal to a sizeas measured in the second direction of another linear shape next towhich the fifth linear shape is positioned.
 27. A semiconductor deviceas recited in claim 1, wherein the gate defining shape of the secondtransistor of the first transistor type corresponds to a first linearshape of the at least six linear shapes, wherein the gate defining shapeof the second transistor of the second transistor type corresponds to asecond linear shape of the at least six linear shapes, wherein the gatedefining shape of the third transistor of the first transistor typecorresponds to a third linear shape of the at least six linear shapes,wherein the gate defining shape of the third transistor of the secondtransistor type corresponds to a fourth linear shape of the at least sixlinear shapes, wherein the first, second, third, and fourth linearshapes have respective inner ends that are positioned over the innernon-diffusion region, wherein the inner ends of the first and thirdlinear shapes are offset in the first direction relative to each other,and wherein the inner ends of the second and fourth linear shapes areoffset in the first direction relative to each other.
 28. Asemiconductor device as recited in claim 27, further comprising: a firstelectrical connection between the first and fourth linear shapes, thefirst electrical connection extending through a first number ofinterconnect layers; and a second electrical connection between thesecond and third linear shapes, the second electrical connectionextending through a second number of interconnect layers, wherein acount of the first number of interconnect layers is different than acount of the second number of interconnect layers.
 29. A semiconductordevice as recited in claim 28, wherein the at least six linear shapesincludes a linear shape that is not a gate defining shape.
 30. Asemiconductor device as recited in claim 27, wherein the first contactis positioned a first contact-to-gate distance away from the secondtransistor of the first transistor type, and wherein the second contactis positioned a second contact-to-gate distance away from the secondtransistor of the second transistor type, wherein the third contact ispositioned a third contact-to-gate distance away from the thirdtransistor of the first transistor type, wherein the fourth contact ispositioned a fourth contact-to-gate distance away from the thirdtransistor of the second transistor type, and wherein at least two ofthe first, second, third, and fourth contact-to-gate distances aredifferent.
 31. A semiconductor device as recited in claim 30, whereinthe at least six linear shapes includes a fifth linear shape that is nota gate defining shape, and wherein the fifth linear shape has a size asmeasured in the second direction that is substantially equal to a sizeas measured in the second direction of another linear shape next towhich the fifth linear shape is positioned.
 32. A semiconductor deviceas recited in claim 1, wherein the region of the semiconductor deviceincludes at least two gate defining shapes each having a gate portionand an extending portion that extends in the first direction away fromthe gate portion and over the inner non-diffusion region, each gateportion of the at least two gate defining shapes forming a respectivegate electrode of a separate transistor of a same transistor type, andwherein the extending portions of the at least two gate defining shapeshave at least two different lengths as measured in the first direction.33. A semiconductor device as recited in claim 32, wherein the firstcontact is positioned a first contact-to-gate distance away from thesecond transistor of the first transistor type, and wherein the secondcontact is positioned a second contact-to-gate distance away from thesecond transistor of the second transistor type, wherein the thirdcontact is positioned a third contact-to-gate distance away from thethird transistor of the first transistor type, wherein the fourthcontact is positioned a fourth contact-to-gate distance away from thethird transistor of the second transistor type, and wherein at least twoof the first, second, third, and fourth contact-to-gate distances aredifferent.
 34. A semiconductor device as recited in claim 33, whereinthe at least six linear shapes includes a first linear shape that is nota gate defining shape and that has a size as measured in the seconddirection that is substantially equal to a size as measured in thesecond direction of another linear shape next to which the first linearshape is positioned.
 35. A semiconductor device as recited in claim 34,wherein the at least six linear shapes includes a second linear shapethat is not a gate defining shape and that is positioned next to andspaced apart from the first linear shape.
 36. A semiconductor device asrecited in claim 1, wherein the gate defining shapes of both the firsttransistor of the first transistor type and first transistor of thesecond transistor type are part of a first linear shape of the at leastsix linear shapes, wherein the gate defining shape of the secondtransistor of the first transistor type is part of a second linear shapeof the at least six linear shapes, wherein the gate defining shape ofthe second transistor of the second transistor type is part of a thirdlinear shape of the at least six linear shapes, wherein the gatedefining shape of the third transistor of the first transistor type ispart of a fourth linear shape of the at least six linear shapes, whereinthe gate defining shape of the third transistor of the second transistortype is part of a fifth linear shape of the at least six linear shapes,wherein the gate defining shapes of both the fourth transistor of thefirst transistor type and fourth transistor of the second transistortype are part of a sixth linear shape of the at least six linear shapes,wherein the at least six linear shapes includes a seventh linear shape,and wherein the first, sixth, and seventh linear shapes have asubstantially equal length as measured in the first direction.
 37. Asemiconductor device as recited in claim 36, wherein the first contactis positioned a first contact-to-gate distance away from the secondtransistor of the first transistor type, and wherein the second contactis positioned a second contact-to-gate distance away from the secondtransistor of the second transistor type, wherein the third contact ispositioned a third contact-to-gate distance away from the thirdtransistor of the first transistor type, wherein the fourth contact ispositioned a fourth contact-to-gate distance away from the thirdtransistor of the second transistor type, and wherein at least two ofthe first, second, third, and fourth contact-to-gate distances aredifferent.
 38. A semiconductor device as recited in claim 1, wherein thesecond and third contacts are positioned above and over the innernon-diffusion region.
 39. A semiconductor device as recited in claim 38,wherein the first contact is positioned a first contact-to-gate distanceaway from the second transistor of the first transistor type, andwherein the second contact is positioned a second contact-to-gatedistance away from the second transistor of the second transistor type,wherein the third contact is positioned a third contact-to-gate distanceaway from the third transistor of the first transistor type, wherein thefourth contact is positioned a fourth contact-to-gate distance away fromthe third transistor of the second transistor type, and wherein at leasttwo of the first, second, third, and fourth contact-to-gate distancesare different.
 40. A semiconductor device as recited in claim 38,wherein the at least six linear shapes includes a first linear shapethat is not a gate defining shape and that has a size as measured in thesecond direction that is substantially equal to a size as measured inthe second direction of another linear shape next to which the firstlinear shape is positioned.
 41. A semiconductor device as recited inclaim 38, further comprising: a plurality of interconnect layers formedabove the gate layer region; and a first electrical connection betweenthe gate defining shape of the second transistor of the secondtransistor type and the gate defining shape of the third transistor ofthe first transistor type, the first electrical connection extendingthrough only one interconnect layer of the plurality of interconnectlayers.
 42. A semiconductor device as recited in claim 41, wherein thegate defining shape of the second transistor of the second transistortype and the gate defining shape of the third transistor of the firsttransistor type are within 360 nanometers of each other as measured inthe second direction.
 43. A semiconductor device as recited in claim 41,further comprising: a second electrical connection between the gatedefining shape of the second transistor of the first transistor type andthe gate defining shape of the third transistor of the second transistortype.
 44. A semiconductor device as recited in claim 43, wherein thegate defining shape of the second transistor of the first transistortype and the gate defining shape of the third transistor of the secondtransistor type are within 360 nanometers of each other as measured inthe second direction.
 45. A semiconductor device as recited in claim 1,further comprising: a plurality of interconnect layers formed above thegate layer region; and a first electrical connection between the gatedefining shape of the second transistor of the second transistor typeand the gate defining shape of the third transistor of the firsttransistor type, the first electrical connection extending through onlyone interconnect layer of the plurality of interconnect layers.
 46. Asemiconductor device as recited in claim 45, wherein the gate definingshape of the second transistor of the second transistor type and thegate defining shape of the third transistor of the first transistor typeare within 360 nanometers of each other as measured in the seconddirection.
 47. A semiconductor device as recited in claim 45, furthercomprising: a second electrical connection between the gate definingshape of the second transistor of the first transistor type and the gatedefining shape of the third transistor of the second transistor type.48. A semiconductor device as recited in claim 47, wherein the gatedefining shape of the second transistor of the first transistor type andthe gate defining shape of the third transistor of the second transistortype are within 360 nanometers of each other as measured in the seconddirection.
 49. A computer readable medium having program instructionsstored thereon for a semiconductor device layout, comprising: a layoutof a number of N-diffusion and a number of P-diffusion defined in aregion of the semiconductor device, the number of N-diffusion arrangedrelative to the number of P-diffusion such that an inner non-diffusionregion exists between the number of N-diffusion collectively and thenumber of P-diffusion collectively; a layout of at least six linearshapes extending along a first direction in a gate layer region of theregion of the semiconductor device such that each of the at least sixlinear shapes has its lengthwise centerline extending in the firstdirection, the at least six linear shapes spaced apart from each otherin accordance with an integer multiple of a first pitch as measured in asecond direction perpendicular to the first direction between lengthwisecenterlines of the at least six linear shapes, wherein each linear shapewithin the gate layer region is spaced apart from at least one otherlinear shape by a lengthwise centerline-to-lengthwise centerline spacingas measured in the second direction that is substantially equal to thefirst pitch, and wherein all linear shapes within the gate layer regionare within 1930 nanometers of each other, and wherein some of the atleast six linear shapes are gate defining shapes, and some of the gatedefining shapes forming P-transistors with respective ones of the numberof P-diffusion, and some of the gate defining shapes formingN-transistors with respective ones of the number of N-diffusion, whereinthe P-transistors and N-transistors define a set of at least eighttransistors in the region of the semiconductor device, including, (a) afirst N-transistor, a second N-transistor, a third N-transistor, and afourth N-transistor, (b) a first P-transistor, a second P-transistor, athird P-transistor, and a fourth P-transistor, such that, (i) the firstN and P transistors aligned along the first direction and electricallyconnected to each other through their gate defining shapes, (ii) thesecond N and P transistors aligned along the first direction and theirgate defining shapes having extensions not electrically connected toeach other, (iii) the third N and P transistors aligned along the firstdirection and their gate defining shapes having extensions notelectrically connected to each other, and (iv) the fourth N and Ptransistors aligned along the first direction and electrically connectedto each other through their gate defining shapes wherein either a) the Ntransistors are transistors of a first transistor type and the Ptransistors are transistors of a second transistor type, such that thefirst, second, third, and fourth N transistors are first, second, third,and fourth transistors of the first transistor type, and such that thefirst, second, third, and fourth P transistors are first, second, third,and fourth transistors of the second transistor type, or b) the Ptransistors are transistors of a first transistor type and the Ntransistors are transistors of a second transistor type, such that thefirst, second, third, and fourth P transistors are first, second, third,and fourth transistors of the first transistor type, and such that thefirst, second, third, and fourth N transistors are first, second, third,and fourth transistors of the second transistor type; a layout of afirst contact contacting the gate defining shape of the secondtransistor of the first transistor type; a layout of a second contactcontacting the gate defining shape of the second transistor of thesecond transistor type; a layout of a third contact contacting the gatedefining shape of the third transistor of the first transistor type; anda layout of a fourth contact contacting the gate defining shape of thethird transistor of the second transistor type, wherein only one of thefirst and third contacts is positioned above and over the innernon-diffusion region.
 50. A method for creating a layout of anintegrated circuit, comprising: operating a computer to define a numberof N-diffusion and a number of P-diffusion defined in a region of thesemiconductor device, the number of N-diffusion arranged relative to thenumber of P-diffusion such that an inner non-diffusion region existsbetween the number of N-diffusion collectively and the number ofP-diffusion collectively; operating a computer to define at least sixlinear shapes extending along a first direction in a gate layer regionof the region of the semiconductor device such that each of the at leastsix linear shapes has its lengthwise centerline extending in the firstdirection, the at least six linear shapes spaced apart from each otherin accordance with an integer multiple of a first pitch as measured in asecond direction perpendicular to the first direction between lengthwisecenterlines of the at least six linear shapes, wherein each linear shapewithin the gate layer region is spaced apart from at least one otherlinear shape by a lengthwise centerline-to-lengthwise centerline spacingas measured in the second direction that is substantially equal to thefirst pitch, and wherein all linear shapes within the gate layer regionare within 1930 nanometers of each other, and wherein some of the atleast six linear shapes are gate defining shapes, and some of the gatedefining shapes forming P-transistors with respective ones of the numberof P-diffusion, and some of the gate defining shapes formingN-transistors with respective ones of the number of N-diffusion, whereinthe P-transistors and N-transistors define a set of at least eighttransistors in the region of the semiconductor device, including, (a) afirst N-transistor, a second N-transistor, a third N-transistor, and afourth N-transistor, (b) a first P-transistor, a second P-transistor, athird P-transistor, and a fourth P-transistor, such that, (i) the firstN and P transistors aligned along the first direction and electricallyconnected to each other through their gate defining shapes, (ii) thesecond N and P transistors aligned along the first direction and theirgate defining shapes having extensions not electrically connected toeach other, (iii) the third N and P transistors aligned along the firstdirection and their gate defining shapes having extensions notelectrically connected to each other, and (iv) the fourth N and Ptransistors aligned along the first direction and electrically connectedto each other through their gate defining shapes wherein either a) the Ntransistors are transistors of a first transistor type and the Ptransistors are transistors of a second transistor type, such that thefirst, second, third, and fourth N transistors are first, second, third,and fourth transistors of the first transistor type, and such that thefirst, second, third, and fourth P transistors are first, second, third,and fourth transistors of the second transistor type, or b) the Ptransistors are transistors of a first transistor type and the Ntransistors are transistors of a second transistor type, such that thefirst, second, third, and fourth P transistors are first, second, third,and fourth transistors of the first transistor type, and such that thefirst, second, third, and fourth N transistors are first, second, third,and fourth transistors of the second transistor type; operating acomputer to define a first contact contacting the gate defining shape ofthe second transistor of the first transistor type; operating a computerto define a second contact contacting the gate defining shape of thesecond transistor of the second transistor type; operating a computer todefine a third contact contacting the gate defining shape of the thirdtransistor of the first transistor type; and operating a computer todefine a fourth contact contacting the gate defining shape of the thirdtransistor of the second transistor type, wherein only one of the firstand third contacts is positioned above and over the inner non-diffusionregion.